FET type: | MOSFET N-channel | type: | field effect transistor |
Media available: | data sheet | Current - Continuous Drain (Id) @ 25°C: | 200A |
FET characteristics: | standard | Drain-source voltage (Vdss): | 80V |
Payment/Payment: | up to date | Operating temperature: | -55~+150℃ |
port: | Shenzhen | Installation type: | through hole |
Supply capacity: | 100000 pieces per month | payment terms: | L/C, Western Union, D/P, D/A, T/T, MoneyGram |
Gate charge (Qg) (maximum) @Vgs: | - | Vgs(th)(max)@Id: | 4V@250uA |
Packaging/Case: | TO-220(TO-220-3) | brand: | origin |
Input Capacitance (Ciss) (Max) @ Vds: | - | place of origin; place of origin: | origin |
model: | HY4008P | Rds On (Max) @ Id, Vgs: | 3.5mΩ@10V,100A |
Card: | field effect transistor | Supplier type: | original factory |
application: | General purpose | type of packaging: | through hole |
Quantity / piece) | 1 ~ 30000 | 30001 ~ 300000 | > 300000 |
EST. time (days) | 5 | 7 | to be negotiated |